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FJU1615
FJU1615
For Output Amplifier of Electronic Flash Unit
* Low Collector-Emitter Saturation Voltage * High Performance at Low Supply Voltage
1
I-PACK
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Ratings -30 -20 -7 -10 1 150 -55 ~ 150 Units V V V A W C C
Electrical Characteristics Ta=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) fT Cob TON TSTG TF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Band Width Product Output Capacitance Turn On Time Storage Time Fall Time Test Condition IC=-100A, IE=0 IC=-1mA, IB=0 IC=-100A, IC=0 VCB=-20V, IE=0 VEB=-7V, IC=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-4A IC=-4A, IB=-0.05A IC=-4A, IB=-0.05A VCE=-5V, IC=-1.5A VCB=-10V, IE=0, f=1MHz IC=-5A, IB1=-IB2=-0.125A RL=2, VCC=-10V 200 160 -0.17 -0.9 180 220 80 300 60 Min. -30 -20 -7 -1.0 -1.0 600 -0.25 -1.2 V V MHz pF ns ns ns Typ. Max. Units V V V A A
* Pulse Test : PW 350s,Duty Cycle 2%
hFE1 Classification
Classification hFE1 L 200 ~ 400 K 300 ~ 600
(c) 2001 Fairchild Semiconductor Corporation
Rev. A. February 2001
FJU1615
Typical Characteristics
-20
-15
IB=-100mA
VCE=-2V
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
-15
Tc =125
-10
IB =-50mA
75 25
-10
IB=-20mA
-5
-5
IB=-10mA
-0 -2 -4 -6 -8 -10 -12 -14 -16 -18
-0 -0.0
-0.4
-0.8
-1.2
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE[V], BASE-EMITTER VOLTAGE
Fig. 1 Static Characteristic
Fig. 2 Transfer Characteristic
1000
-10
VCE(sat) [V], SATURATION VOLTAGE
Tc =125 75 25
VCE=-2.0V
hFE, DC CURRENT GAIN
-1
100
-0.1
IC/IB =80 IC /IB=40
-0.01
10 -0.1
-1
-10
-100
-0.1
-1
-10
-100
IC[A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Fig. 3 DC Current Gain
Fig. 4 Collector-Emitter Saturation Voltage
-10
VBE(sat) [V], SATURATION VOLTAGE
IC/IB=80
500
VCB =-10V, IE=0 f=1MHz
Cob[pF], CAPACITANCE
400
-1
300
-0.1
200
100
-0.01 -0.1
0
-1 -10 -100
-1
-10
-100
IC[A], COLLECTOR CURRENT
VCB [V], COLLECTOR-BASE VOLTAGE
Fig. 5 Base-Emitter Saturation Voltage
Fig. 6 Output Capacitance
(c) 2001 Fairchild Semiconductor Corporation
Rev. A. February 2001
FJU1615
Typical Characteristics (Continued)
1.2
100
TC=25
PD[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
IC(Pulse)
10
10ms
1ms
PW=100us
0.8
IC(DC)
0.4
1
0.0 0 50 100 150
0.1 0.1
1
10
100
TC[], CASE TEMPERATURE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Fig. 7 Power Derating
Fig. 8 Forward Bias Safe Operating Area
(c) 2001 Fairchild Semiconductor Corporation
Rev. A. February 2001
FJU1615
Package Dimensions
I-PAK
6.60 0.20 5.34 0.20 (0.50) (4.34) (0.50) 0.50 0.10 2.30 0.20
0.20
0.20
0.60
0.70
0.10
6.10
0.20
0.80
0.20
1.80
MAX0.96 0.76 0.10
9.30
0.30
2.30TYP [2.300.20]
2.30TYP [2.300.20]
0.50 0.10
16.10
0.30
Dimensions in Millimeters
(c) 2001 Fairchild Semiconductor Corporation Rev. A. February 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R)
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM
PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM LILENT SWITCHER(R) SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTM TinyLogicTM VCXTM UHCTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c) 2001 Fairchild Semiconductor Corporation
Rev. G

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